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Interlayer-Crosslinkable Hole Transport Layer Achieved Highly Efficient and Stable Perovskite Solar Cells

Wang, Zheng; Zhang, Jiakang; Grandhi, G. Krishnamurthy; Zou, Muhua; Vivo, Paola; Zhou, Zhongmin; Zhang, Haichang (2025-01)

 
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Interlayer-Crosslinkable_Hole_Transport.pdf (853.3Kt)
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Wang, Zheng
Zhang, Jiakang
Grandhi, G. Krishnamurthy
Zou, Muhua
Vivo, Paola
Zhou, Zhongmin
Zhang, Haichang
01 / 2025

Advanced Functional Materials
e10279
This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited.
doi:10.1002/adfm.202510279
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-202508198320

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Peer reviewed
Tiivistelmä
Dopant-free small-molecule hole-transport materials (HTMs) in inverted perovskite solar cells often suffer from interfacial degradation during solution processing, which compromises charge extraction and device stability. Here, a reactive molecular engineering strategy is presented involving two concurrent reactions: i) radical polymerization of Apronal into a vertically distributed poly(Apronal) (P-Apronal) network within the perovskite layer, and ii) interfacial thiourea formation via nucleophilic addition between primary amines of Apronal and isothiocyanate (-NCS) groups in a newly designed HTM, CAZ-NCS. The -NCS moieties, spatially confined within the HTL, undergo thiourea formation with Apronal's amine groups at the buried interface during spin-coating and thermal annealing, while the vinyl groups of Apronal simultaneously polymerize into a vertically extended network. This chemically cohesive interface boosts both operational robustness and charge extraction. Devices incorporating CAZ-NCS-P achieve a power conversion efficiency of 23.52% and retain 94% of their initial performance after 600 h of continuous illumination (T80 = 1951 h). This self-adaptive and spatially programmed interfacial crosslinking strategy offers a new paradigm for stabilizing buried interfaces in solution-processed optoelectronic devices.
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Kalevantie 5
PL 617
33014 Tampereen yliopisto
oa[@]tuni.fi | Tietosuoja | Saavutettavuusseloste