Discretely Tunable GaSb/Si₃N₄ Hybrid Laser Emitting at 2594, 2629, and 2670 nm

Abstract

Details on the development and characterization of a discretely tunable GaSb/Si3N4 hybrid multiwavelength laser are presented. The integrated laser combines a GaSb-based reflective semiconductor amplifier with a novel Si3N4 circuit. The Si3N4 is comprised of two Mach-Zehnder interferometers interconnected with three thermally tunable distributed Bragg reflectors to form a discretely tunable hybrid laser. It showcases discrete emission at 2670.42 nm, 2629.12 nm, and 2594.27 nm wavelengths, with maximum average output powers of 2.8 mA at 480 mA, 5 mW at 410 mA, and 3.3 mW at 495 mA, respectively. The unique characteristics of the hybrid laser are appealing for multiwavelength absorption spectroscopy of H2S, CO2 and H2O.