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Performance Metrics for a Modern BOPP Capacitor Film

Ritamäki, Mikael; Rytöluoto, Ilkka; Lahti, Kari (2019-08-01)

 
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Ritamäki, Mikael
Rytöluoto, Ilkka
Lahti, Kari
01.08.2019

IEEE Transactions on Dielectrics and Electrical Insulation
This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited.
doi:10.1109/TDEI.2019.007970
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-201912207052

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Peer reviewed
Tiivistelmä
In this paper, a set of performance metrics for modern biaxially oriented polypropylene (BOPP) capacitor films is established. The fundamental and applied properties of BOPP films required for application in state-of-the-art DC metallized film capacitors are reviewed, highlighting aspects related to high temperature operation, base PP properties and film processing. Commercial BOPP films—both base films and metallized films based on classic isotactic PP—are studied comprehensively, encompassing structural–morphological characterization and short- to medium-term dielectric characterization. Dielectric spectroscopy results demonstrate the negligible dielectric losses of BOPP, being in the range of 10−4 or less in the expected operation temperature regime. Thermally stimulated depolarization current (TSDC) measurements indicated a modest density of shallow traps (~0.75 eV) and a high density of deep traps (~1.08 eV) in the 5 µm and 10 µm film variants showing differences presumably arising from film processing. Such an electronic structure was found to be connected with ultra-low conductivity (in the range of 10-17–10-16 S/m), high breakdown strength (~700 V/µm) and negligible space charge accumulation up to temperatures of ~70 °C. It is shown that at current design stresses (~200 V/µm at ~60 °C) BOPP is operated close to its fundamental thermal and electrical limitations. Voltage endurance tests at higher fields revealed the onset of high-field degradation and drastically reduced insulation life, and thermal activation of deep traps in the high temperature region (~100 °C) was found to result in reduced dielectric performance.
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Kalevantie 5
PL 617
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Kalevantie 5
PL 617
33014 Tampereen yliopisto
oa[@]tuni.fi | Tietosuoja | Saavutettavuusseloste