Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

Moiseev, E. I.; Maximov, M. V.; Nadtochiy, A. M.; Kryzhanovskaya, N. V.; Sannikov, D. A.; Yagafarov, T.; Kulagina, M.; Niemi, T.; Isoaho, R.; Guina, M.; Zhukov, A. E. (2018)
 
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Moiseev, E. I.
Maximov, M. V.
Nadtochiy, A. M.
Kryzhanovskaya, N. V.
Sannikov, D. A.
Yagafarov, T.
Kulagina, M.
Niemi, T.
Isoaho, R.
Guina, M.
Zhukov, A. E.
2018

doi:10.1088/1742-6596/1124/8/081048
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tty-201905021457

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Peer reviewed
Tiivistelmä
<p>Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.</p>
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