Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

Tukiainen, Antti; Lyytikäinen, Jari; Aho, Timo; Halonen, Eero; Raappana, Marianna; Cappelluti, Federica; Guina, Mircea (2018-11)
 
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https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8548180


Tukiainen, Antti
Lyytikäinen, Jari
Aho, Timo
Halonen, Eero
Raappana, Marianna
Cappelluti, Federica
Guina, Mircea
11 / 2018

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doi:10.1109/PVSC.2018.8548180
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https://urn.fi/URN:NBN:fi:tuni-201910213961

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We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the ‘shallow’ junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.
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