1180 nm GaInNAs quantum well based high power DBR laser diodes

Viheriälä, Jukka; Aho, Antti; Virtanen, Heikki; Koskinen, Mervi; Dumitrescu, Mihail; Guina, Mircea (2017-02-24)
 
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Viheriälä, Jukka
Aho, Antti
Virtanen, Heikki
Koskinen, Mervi
Dumitrescu, Mihail
Guina, Mircea
24.02.2017

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doi:10.1117/12.2251317
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https://urn.fi/URN:NBN:fi:tuni-201912197004

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We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.
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