Decreasing Defect-State Density of Al<sub>2</sub>O<sub>3</sub>/Ga<sub>x</sub>In<sub>1-x</sub>As Device Interfaces with InO<sub>x</sub> Structures
Mäkelä, Jaakko; Tuominen, Marjukka; Dahl, Johnny; Granroth, Sari; Yasir, Muhammad; Lehtiö, Juha-Pekka; Uusitalo, Rami-Roope; Kuzmin, Mikhail; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Félix, Roberto; Lastusaari, Mika; Polojärvi, Ville; Lyytikäinen, Jari; Tukiainen, Antti; Guina, Mircea (2017-09-19)
19.09.2017
Advanced Materials Interfaces
1700722
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-201912307136
https://urn.fi/URN:NBN:fi:tuni-201912307136
Kuvaus
Peer reviewed
Tiivistelmä
Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.
Kokoelmat
- TUNICRIS-julkaisut [23497]