Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

Kryzhanovskaya, N. V.; Moiseev, E. I.; Polubavkina, Yu S.; Zubov, F. I.; Maximov, M. V.; Lipovskii, A. A.; Kulagina, M. M.; Troshkov, S. I.; Korpijärvi, V. M.; Niemi, T.; Isoaho, R.; Guina, M.; Lebedev, M. V.; Lvova, T. V.; Zhukov, A. E. (2016-12-21)
 
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Kryzhanovskaya, N. V.
Moiseev, E. I.
Polubavkina, Yu S.
Zubov, F. I.
Maximov, M. V.
Lipovskii, A. A.
Kulagina, M. M.
Troshkov, S. I.
Korpijärvi, V. M.
Niemi, T.
Isoaho, R.
Guina, M.
Lebedev, M. V.
Lvova, T. V.
Zhukov, A. E.
21.12.2016

Journal of Applied Physics
233103
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doi:10.1063/1.4971977
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https://urn.fi/URN:NBN:fi:tuni-201912307138

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<p>We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiN<sub>x</sub> encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T<sub>0</sub> = 60 K.</p>
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