Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

Tukiainen, Antti; Aho, Arto; Polojärvi, Ville; Guina, Mircea (2016-11-21)
 
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Tukiainen, Antti
Aho, Arto
Polojärvi, Ville
Guina, Mircea
21.11.2016

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doi:10.1109/PVSC.2016.7749613
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https://urn.fi/URN:NBN:fi:tty-201612294925

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The influence of AlGaAs-based distributed Bragg reflector (DBR) on the performance of a GaInNAs n-i-p solar cells is reported. The DBR increased the short circuit current density by ~1 mA/cm2, owing to increased external quantum efficiency in the wavelength range from 1120 nm to 1240 nm. As a result of the incorporation of the DBR structure, the series resistance of the cell was increased by 4 mOhm-cm2.
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