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Antimony-Bismuth Alloying: The Key to a Major Boost in the Efficiency of Lead-Free Perovskite-Inspired Photovoltaics

Al-Anesi, Basheer; Grandhi, G. Krishnamurthy; Pecoraro, Adriana; Sugathan, Vipinraj; Viswanath, Noolu Srinivasa Manikanta; Ali-Löytty, Harri; Liu, Maning; Ruoko, Tero-Petri; Lahtonen, Kimmo; Manna, Debjit; Toikkonen, Sami; Muñoz-García, Ana Belén; Pavone, Michele; Vivo, Paola (2023-11-15)

 
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Al-Anesi, Basheer
Grandhi, G. Krishnamurthy
Pecoraro, Adriana
Sugathan, Vipinraj
Viswanath, Noolu Srinivasa Manikanta
Ali-Löytty, Harri
Liu, Maning
Ruoko, Tero-Petri
Lahtonen, Kimmo
Manna, Debjit
Toikkonen, Sami
Muñoz-García, Ana Belén
Pavone, Michele
Vivo, Paola
15.11.2023

Small
2303575
doi:10.1002/smll.202303575
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-202308227728

Kuvaus

Peer reviewed
Tiivistelmä
The perovskite-inspired Cu2AgBiI6 (CABI) material has been gaining increasing momentum as photovoltaic (PV) absorber due to its low toxicity, intrinsic air stability, direct bandgap, and a high absorption coefficient in the range of 105 cm−1. However, the power conversion efficiency (PCE) of existing CABI-based PVs is still seriously constrained by the presence of both intrinsic and surface defects. Herein, antimony (III) (Sb3+) is introduced into the octahedral lattice sites of the CABI structure, leading to CABI-Sb with larger crystalline domains than CABI. The alloying of Sb3+ with bismuth (III) (Bi3+) induces changes in the local structural symmetry that dramatically increase the formation energy of intrinsic defects. Light-intensity dependence and electron impedance spectroscopic studies show reduced trap-assisted recombination in the CABI-Sb PV devices. CABI-Sb solar cells feature a nearly 40% PCE enhancement (from 1.31% to 1.82%) with respect to the CABI devices mainly due to improvement in short-circuit current density. This work will promote future compositional design studies to enhance the intrinsic defect tolerance of next-generation wide-bandgap absorbers for high-performance and stable PVs.
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Kalevantie 5
PL 617
33014 Tampereen yliopisto
oa[@]tuni.fi | Tietosuoja | Saavutettavuusseloste