Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

Zhang, W.-D.; Growden, T. A.; Storm, D. F.; Meyer, D. J.; Berger, P. R.; Brown, E. R. (2020-01)
 
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Zhang, W.-D.
Growden, T. A.
Storm, D. F.
Meyer, D. J.
Berger, P. R.
Brown, E. R.
01 / 2020

IEEE Transactions on Electron Devices
8933349
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doi:10.1109/TED.2019.2955360
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https://urn.fi/URN:NBN:fi:tuni-202111268723

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Non peer reviewed
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The experimental and simulated switching behavior across the negative differential resistance (NDR) region of GaN/AlN double-barrier resonant tunneling diodes (RTDs) is presented. The shortest 10%-90% experimental switching time was ∼55 ps. The experimental results are also studied with P-SPICE circuit models, which show that the relatively low peak-to-valley current ratio (∼1.5), relatively high specific contact resistance (≥1 × 10-6 Ω-cm2), and relatively large specific capacitance limit the switching time.

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