Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector

Aho, Timo; Tukiainen, Antti; Ranta, Sanna; Elsehrawy, Farid; Raappana, Marianna; Isoaho, Riku; Aho, Arto; Cappelluti, Federica; Guina, Mircea (2020)
 
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Aho, Timo
Tukiainen, Antti
Ranta, Sanna
Elsehrawy, Farid
Raappana, Marianna
Isoaho, Riku
Aho, Arto
Cappelluti, Federica
Guina, Mircea
2020

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doi:10.1109/PVSC40753.2019.8981170
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https://urn.fi/URN:NBN:fi:tuni-202101181406

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Non peer reviewed
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We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.
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