Defect-Mediated Crystallization of the Particulate TiO<sub>2</sub> Photocatalyst Grown by Atomic Layer Deposition
Bhuskute, Bela D.; Ali-Löytty, Harri; Saari, Jesse; Hiltunen, Arto; Ruoko, Tero-Petri; Salminen, Turkka; Valden, Mika (2024-12-19)
Bhuskute, Bela D.
Ali-Löytty, Harri
Saari, Jesse
Hiltunen, Arto
Ruoko, Tero-Petri
Salminen, Turkka
Valden, Mika
19.12.2024
Journal of Physical Chemistry C
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-202501071103
https://urn.fi/URN:NBN:fi:tuni-202501071103
Kuvaus
Peer reviewed
Tiivistelmä
Nanopowders or films of pure and mixed oxides in nanoparticulate form have gained specific interest due to their applicability in functionalizing high-surface-area substrates. Among various other applications, our presented work primarily focuses on the behavior of TiO2 as a photocatalyst deposited by atomic layer deposition (ALD) on a quartz particle. The photocatalytic activity of TiO2 on quartz particles grown by ALD was studied in terms of ALD growth temperature and post-treatment heating rate. Amorphous TiO2 thin films (30 nm) were grown from tetrakis(dimethylamido)titanium (TDMAT) at 100 and 200 °C on quartz particles (0.35-3.5 μm) and crystallized using oxidative heat treatment at 500 °C with variable heating rates. The growth temperature was found to affect the TiO2 defect structure: TiO2 grown at 200 °C is black due to Ti3+ defects, whereas the film grown at 100 °C is white but contains some traces of the TDMAT ALD precursor. During the oxidative heat treatment, precursor traces desorbed and Ti3+ defects were oxidized. ALD TiO2 grown at 100 °C crystallized as anatase, whereas the rutile-to-anatase ratio of 200 °C grown TiO2 increased with the heating rate.
Kokoelmat
- TUNICRIS-julkaisut [23470]