Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation

Abstract

Dual-comb lasers are a new class of ultrafast lasers that enable fast, accurate and sensitive measurements without any mechanical delay lines. Here, we demonstrate a 2-µm laser called MIXSEL (Modelocked Integrated eXternal-cavity Surface Emitting Laser), based on an optically pumped passively modelocked semiconductor thin disk laser. Using III-V semiconductor molecular beam epitaxy, we achieve a center wavelength in the shortwave infrared (SWIR) range by integrating InGaSb quantum well gain and saturable absorber layers onto a highly reflective mirror. The cavity setup consists of a linear straight configuration with the semiconductor MIXSEL chip at one end and an output coupler a few centimeters away, resulting in an optical comb spacing between 1 and 10 GHz. This gigahertz pulse repetition rate is ideal for ambient pressure gas spectroscopy and dual-comb measurements without requiring additional stabilization. In single-comb operation, we generate 1.5-ps pulses with an average output power of 28mW, a pulse repetition rate of 4 GHz at a center wavelength of 2.035 µm. For dual-comb operation, we spatially multiplex the cavity using an inverted bisprism operated in transmission, achieving an adjustable pulse repetition rate difference estimated up to 4.4MHz. The resulting heterodyne beat reveals a low-noise down-converted microwave frequency comb, facilitating coherent averaging.