1.3 μm InAs quantum dot semiconductor disk laser
Blokhin,S. A.; Bobrov,M. A.; Blokhin,A. A.; Kuzmenkov,A. G.; Vasil'Ev,A. P.; Maleev,N. A.; Dudelev,V. V.; Soboleva,K. K.; Sokolovskii,G. S.; Rantamäki,A.; Okhotnikov,O.; Ustinov,V. M. (2016-08-23)
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Julkaisun pysyvä osoite on
Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality . The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature . However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated . Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.
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