Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

Moiseev, E. I.; Maximov, M. V.; Nadtochiy, A. M.; Kryzhanovskaya, N. V.; Sannikov, D. A.; Yagafarov, T.; Kulagina, M.; Niemi, T.; Isoaho, R.; Guina, M.; Zhukov, A. E. (2018)
 
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Moiseev, E. I.
Maximov, M. V.
Nadtochiy, A. M.
Kryzhanovskaya, N. V.
Sannikov, D. A.
Yagafarov, T.
Kulagina, M.
Niemi, T.
Isoaho, R.
Guina, M.
Zhukov, A. E.
2018


doi:10.1088/1742-6596/1124/8/081048
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https://urn.fi/URN:NBN:fi:tty-201905021457

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Peer reviewed
Tiivistelmä
Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.
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