Charge carrier dynamics in tantalum oxide overlayered and tantalum doped hematite photoanodes
Ruoko, Tero-Petri; Hiltunen, Arto; Iivonen, Tomi; Ulkuniemi, Riina; Lahtonen, Kimmo; Ali-Löytty, Harri; Mizohata, Kenichiro; Valden, Mika; Leskelä, Markku; Tkachenko, Nikolai V. (2019-01)
Tkachenko, Nikolai V.
01 / 2019
Julkaisun pysyvä osoite on
We employ atomic layer deposition to prepare 50 nm thick hematite photoanodes followed by passivating them with a 0.5 nm thick Ta 2 O 5 -overlayer and compare them with samples uniformly doped with the same amount of tantalum. We observe a three-fold improvement in photocurrent with the same onset voltage using Ta-overlayer hematite photoanodes, while electrochemical impedance spectroscopy under visible light irradiation shows a decreased amount of surface states under water splitting conditions. The Ta-doped samples have an even higher increase in photocurrent along with a 0.15 V cathodic shift in the onset voltage and decreased resistivity. However, the surface state capacitance for the Ta-doped sample is twice that of the reference photoanode, which implies a larger amount of surface hole accumulation. We further utilize transient absorption spectroscopy in the sub-millisecond to second timescale under operating conditions to show that electron trapping in both Ta 2 O 5 -passivated and Ta-doped samples is markedly reduced. Ultrafast transient absorption spectroscopy in the sub-picosecond to nanosecond timescale shows faster charge carrier dynamics and reduced recombination in the Ta-doped hematite photoanode resulting in the increased photoelectrochemical performance when compared with the Ta 2 O 5 -overlayer sample. Our results show that passivation does not affect the poor charge carrier dynamics intrinsic to hematite based photoanodes. The Ta-doping strategy results in more efficient electron extraction, solving the electron trapping issue and leading to increased performance over the surface passivation strategy.
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