Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

Moiseev, E.I.; Kryzhanovskaya, N.V.; Maximov, M.V.; Mozharov, A.M.; Gudovskikh, A.S.; Polushkin, A.S.; Mukhin, I.S.; Guseva, Yu A.; Kulagina, M. M.; Troshokov, S. I.; Niemi, T.; Isoaho, R.; Guina, M.; Zhukov, A.E. (2017-11)
 
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Moiseev, E.I.
Kryzhanovskaya, N.V.
Maximov, M.V.
Mozharov, A.M.
Gudovskikh, A.S.
Polushkin, A.S.
Mukhin, I.S.
Guseva, Yu A.
Kulagina, M. M.
Troshokov, S. I.
Niemi, T.
Isoaho, R.
Guina, M.
Zhukov, A.E.
11 / 2017


052002
doi:10.1088/1742-6596/917/5/052002
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https://urn.fi/URN:NBN:fi:tty-201801231118

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Peer reviewed
Tiivistelmä
Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.
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