Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

Kryzhanovskaya, N. V.; Moiseev, E. I.; Polubavkina, Yu S.; Zubov, F. I.; Maximov, M. V.; Lipovskii, A. A.; Kulagina, M. M.; Troshkov, S. I.; Korpijärvi, V. M.; Niemi, T.; Isoaho, R.; Guina, M.; Lebedev, M. V.; Lvova, T. V.; Zhukov, A. E. (2016-12-21)
 
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Kryzhanovskaya, N. V.
Moiseev, E. I.
Polubavkina, Yu S.
Zubov, F. I.
Maximov, M. V.
Lipovskii, A. A.
Kulagina, M. M.
Troshkov, S. I.
Korpijärvi, V. M.
Niemi, T.
Isoaho, R.
Guina, M.
Lebedev, M. V.
Lvova, T. V.
Zhukov, A. E.
21.12.2016


233103
doi:10.1063/1.4971977
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https://urn.fi/URN:NBN:fi:tuni-201912307138

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Peer reviewed
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We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.
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