"Xi, Xiaoxing" - Selaus tekijän mukaan TUNICRIS-julkaisut

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    • Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2 

      Trainer, Daniel J.; Putilov, Alexei V.; Di Giorgio, Cinzia; Saari, Timo; Wang, Baokai; Wolak, Mattheus; Chandrasena, Ravini U.; Lane, Christopher; Chang, Tay-Rong; Jeng, Horng-Tay; Lin, Hsin; Kronast, Florian; Gray, Alexander X.; Xi, Xiaoxing; Nieminen, Jouko; Bansil, Arun; Iavarone, Maria (13.01.2017)
      article
      Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain ...

    • Moiré superlattices and 2D electronic properties of graphite/MoS<sub>2</sub> heterostructures 

      Trainer, Daniel J.; Putilov, Aleksei V.; Wang, Baokai; Lane, Christopher; Saari, Timo; Chang, Tay Rong; Jeng, Horng Tay; Lin, Hsin; Xi, Xiaoxing; Nieminen, Jouko; Bansil, Arun; Iavarone, Maria (05 / 2017)
      article
      &lt;p&gt;Heterostructures of graphite/MoS&lt;sub&gt;2&lt;/sub&gt; display a wide range of lattice registry due to rotational alignment and/or lattice mismatch. Using high resolution scanning tunneling microscopy and ...

    • Visualization of defect induced in-gap states in monolayer MoS2 

      Trainer, Daniel J.; Nieminen, Jouko; Bobba, Fabrizio; Wang, Baokai; Xi, Xiaoxing; Bansil, Arun; Iavarone, Maria (28.02.2022)
      article
      Atomic-scale intrinsic defects play a key role in controlling functional electronic properties of two-dimensional (2D) materials. Here, we present a low-temperature scanning–tunneling microscopy and spectroscopy investigation ...