"Ojanen, Samu-Pekka" - Selaus tekijän mukaan TUNICRIS-julkaisut
Viitteet 1-7 / 7
-
Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si<sub>3</sub>N<sub>4</sub> Hybrid Laser for Multiwavelength Spectroscopy
(15.09.2023)
article<p>A discrete, tunable photonic integrated laser is showcased for multiwavelength spectroscopy of CO<sub>2</sub>, H<sub>2</sub>S, and H<sub>2</sub>O. The laser combines an ... -
Laser-Assisted Bonding Approach for Photonic Integration Processes
(2023)
conferenceCurrent development trends concerning miniaturizing of electronics and photonics systems are aiming at assembly and 3D co-integration of a broad range of technologies including MEMS, microfluidics, wafer level optics, and ... -
Laser-Assisted Bonding of a Miniature Multichannel Laser Diode Chip to a Silicon Photonics Integrated Circuit with Through-Silicon Alignment
(2024)
conferenceThe progression of hybrid integration technology for compact electronics and photonics systems is placing increasing demands on the development of novel automated procedures capable of ensuring reliable integration with ... -
Low-loss operation of silicon-on-insulator integrated components at 2.6–2.7 µm
(02.11.2023)
articleDevelopment of mid-infrared photonics is gaining attention, driven by a multitude of sensing applications requiring increasingly compact and cost-effective photonics systems. To this end, low-loss operation of µm-scale ... -
Widely Tunable (2.47–2.64 µm) Hybrid Laser Based on GaSb/GaInAsSb Quantum-Wells and a Low-Loss Si3N4 Photonic Integrated Circuit
(14.04.2023)
articlePhotonic integrated circuits fabricated using a Si3N4 waveguide platform exhibit low losses in a wide wavelength region extending from visible to beyond 2 µm. This feature is exploited to demonstrate a high-performance ... -
Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si3N4 photonics integrated reflector
(2023)
articleTunable lasers emitting in the 2–3 µm wavelength range that are compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with ... -
Widely Tunable GaSb/Si<sub>3</sub>N<sub>4</sub> Vernier Hybrid Laser Emitting Around 2.55 µm
Springer Proceedings in Physics (16.06.2024)
conferenceThe development and characterization of a GaSb/Si3N4 tunable Vernier hybrid laser is presented. We combined a GaSb-based reflective semiconductor amplifier to provide feedback and gain, with a reflective Si3N4 circuit to ...
