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GaSb diode lasers tunable around 2.6 μm using silicon photonics resonators or external diffractive gratings

Ojanen, S. P.; Viheriälä, J.; Cherchi, M.; Zia, N.; Koivusalo, E.; Karioja, P.; Guina, M. (24.02.2020)
article

We report two tunable diode laser configurations emitting around 2.6 μm, where the gain is provided by a high-gain GaSb-based reflective semiconductor optical amplifier. The lasers are driven in pulsed mode at 20 °C, with ...