"Kymissis, Ioannis" - Selaus tekijän mukaan TUNICRIS-julkaisut
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0.6V threshold voltage thin film transistors with solution processable indium oxide (In<sub>2</sub>O<sub>3</sub>) Channel and Anodized High-κ Al<sub>2</sub>O<sub>3</sub> Dielectric
(01.07.2019)
article<p>Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their ... -
Formulation, printing, and poling method for piezoelectric films based on PVDF–TrFE
(2020)
articlePolyvinylidene fluoride- trifluoroethylene (PVDF–TrFE) has been utilized widely for pressure sensing, healthcare monitoring, and energy harvesting. In order to integrate piezoelectric elements into flexible thin film ...
