Trepo - Selaus asiasanan mukaan "B2. Semiconducting ternary compounds"
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Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth (01.04.2019)
/dk/atira/pure/researchoutput/researchoutputtypes/contributiontojournal/articleThe control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present a methodology for determining the variation ...