Trepo - Selaus tekijän mukaan "Raappana, Marianna"
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Advanced grid concept with external busbars applied on III‒V multijunction solar cells
Raappana, Marianna; Kajas, Ninja; Aho, Arto; Polojärvi, Ville; Aho, Timo; Isoaho, Riku; Tukiainen, Antti; Guina, Mircea
Conference record of the IEEE Photovoltaic Specialists Conference (05.01.2021)
conferenceWe report on the development of an advanced front contact grid design applied on GaInP/GaAs/GaInNAsSb solar cells. Unlike in a conventional grid pattern, the busbars are placed outside the active area of the solar cell. ... -
Comparison of metal/polymer back reflectors with half-sphere, blazed, and pyramid gratings for light trapping in III-V solar cells
Aho, Timo; Guina, Mircea; Elsehrawy, Farid; Cappelluti, Federica; Raappana, Marianna; Tukiainen, Antti; Khairul Alam, A. B.M.; Vartiainen, Ismo; Kuittinen, Markku; Niemi, Tapio (19.03.2018)
article<p>We report on the fabrication of diffraction gratings for application as back contact reflectors. The gratings are designed for thin-film solar cells incorporating absorbers with bandgap slightly lower than GaAs, ... -
Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells
Tukiainen, Antti; Lyytikäinen, Jari; Aho, Timo; Halonen, Eero; Raappana, Marianna; Cappelluti, Federica; Guina, Mircea
CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (11 / 2018)
conferenceWe report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of ... -
Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector
Aho, Timo; Tukiainen, Antti; Ranta, Sanna; Elsehrawy, Farid; Raappana, Marianna; Isoaho, Riku; Aho, Arto; Cappelluti, Federica; Guina, Mircea
Conference record of the IEEE Photovoltaic Specialists Conference (2020)
conferenceWe report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current ... -
Enhancement of Photocurrent in GaInNAs Solar Cells using Ag/Cu Double-Layer Back Reflector
Aho, Timo; Aho, Arto; Tukiainen, Antti; Polojärvi, Ville; Salminen, Turkka; Raappana, Marianna; Guina, Mircea (22.12.2016)
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GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices
Chellu, Abhiroop; Koivusalo, Eero; Raappana, Marianna; Ranta, Sanna; Polojärvi, Ville; Tukiainen, Antti; Lahtonen, Kimmo; Saari, Jesse; Valden, Mika; Seppänen, Heli; Lipsanen, Harri; Guina, Mircea; Hakkarainen, Teemu (2021)
article<p>Several passivation techniques are developed and compared in terms of their ability to preserve the optical properties of close-to-surface InAs/GaAs quantum dots (QDs). In particular, the influence of N-passivation ... -
High Efficiency Lattice Matched Four-Junction Solar Cells on GaAs (Oral)
Aho, Arto; Isoaho, Riku; Raappana, Marianna; Aho, Timo; Polojärvi, Ville; Tukiainen, Antti; Guina, Mircea (2019)
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High Efficiency Lattice Matched Four-Junction Solar Cells on GaAs (Oral)
Aho, Arto; Isoaho, Riku; Raappana, Marianna; Aho, Timo; Polojärvi, Ville; Tukiainen, Antti; Guina, Mircea (2019)
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High performance low-bandgap (0.8 eV) single junction GaInNAsSb solar cells incorporating Au-based back surface reflectors
Isoaho, Riku; Aho, Timo; Aho, Arto; Tukiainen, Antti; Reuna, Jarno Ville Tapio; Raappana, Marianna; Guina, Mircea (07.01.2021)
articleLow-bandgap GaInNAsSb single junction solar cells incorporating a planar Au back surface reflector for enhancing the photocurrent generation are reported. In particular, a 700 nm thick GaInNAsSb junction with a bandgap of ... -
Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporation
Reuna, Jarno; Polojärvi, Ville; Pääkkönen, Pertti; Lahtonen, Kimmo; Raappana, Marianna; Aho, Timo; Isoaho, Riku; Aho, Arto; Valden, Mika; Guina, Mircea (10 / 2019)
articleWe report on the properties of magnesium fluoride (MgF2) thin films deposited by electron beam evaporation as a function of substrate deposition temperature and ex-situ annealing temperature. In particular, we report on ... -
Lattice‐matched four‐junction tandem solar cell including two dilute nitride bottom junctions
Aho, Arto; Isoaho, Riku; Lauri, Hytönen; Aho, Timo; Raappana, Marianna; Polojärvi, Ville; Tukiainen, Antti; Reuna, Jarno; Mäkelä, Severi; Guina, Mircea (10.12.2018)
articleMonolithic four‐junction solar cells incorporating two dilute nitride (GaInNAsSb) bottom junctions are reported. The dilute nitride junctions have band gaps of 0.9 and 1.2 eV, while the top junctions have band gaps of 1.4 ... -
Metal/Polymer Back Reflectors with Diffraction Gratings for Light Trapping in III-V Solar Cells
Aho, Timo; Guina, Mircea; Elsehrawy, Farid; Cappelluti, Federica; Raappana, Marianna; Tukiainen, Antti; Khairul Alam, A. B. M.; Vartiainen, Ismo; Kuittinen, Markku; Niemi, Tapio
CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (11 / 2018)
conferenceWe report on the fabrication, characterization and simulation of diffraction gratings for back contact reflectors in III-V solar cells. The gratings are designed for thin-film solar cells incorporating absorbers with bandgap ... -
Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells
Isoaho, Riku; Aho, Arto; Tukiainen, Antti; Aho, Timo; Raappana, Marianna; Salminen, Turkka; Reuna, Jarno; Guina, Mircea (2019)
conferenceNarrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, ... -
Nonselective etching of As and P based III‒V solar cell heterostructures with aqueous solutions of HIO<sub>3</sub> and HCl
Raappana, Marianna; Koikkalainen, Tomi; Polojärvi, Ville; Aho, Arto; Aho, Timo; Isoaho, Riku; Tukiainen, Antti; Guina, Mircea (01.07.2021)
article<p>Etching characteristics of lattice-matched GaInP/GaAs/GaInNAsSb heterostructures by aqueous solutions of iodic acid (HIO<sub>3</sub>) and hydrochloric acid (HCl) is reported. The study aims at optimization ... -
Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE
Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Raappana, Marianna; Aho, Timo; Guina, Mircea
E3S Web of Conferences (2017)
conferenceDilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report ... -
Performance of Solar Cell Grids based on Ag, Au, and Al for Cost-Effective Manufacturing
Raappana, Marianna; Aho, Arto; Aho, Timo; Isoaho, Riku; Anttola, Elina; Kajas, Ninja; Polojärvi, Ville; Tukiainen, Antti; Guina, Mircea (10 / 2019)
conferenceWe report on the performance of contact grids based on Ag, Al, and Au applied to III-V multijunction solar cells. We compare their their suitability as grid metals from different perspectives, including price, mass-to-conductivity ... -
Performance Study of Lattice-Matched Multijunction Solar Cells Incorporating GaInNAsSb Junctions with 0.7 – 1.4 eV Bandgap
Aho, Arto; Isoaho, Riku; Raappana, Marianna; Aho, Timo; Polojärvi, Ville; Tukiainen, Antti; Anttola, Elina; Mäkelä, Severi; Reuna, Jarno; Guina, Mircea
Conference record of the IEEE Photovoltaic Specialists Conference (2020)
conferenceWe report on the progress made in the development of lattice-matched multijunction solar cells employing dilute nitride sub-cells. In particular, we report on upright four-junction architecture with bandgaps of 0.9 eV, 1.2 ... -
Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs
Isoaho, Riku; Aho, Arto; Tukiainen, Antti; Aho, Timo; Raappana, Marianna; Salminen, Turkka; Reuna, Jarno; Guina, Mircea (15.06.2019)
article<p> We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, i.e. in the range of 5–8%, and bandgap energies close to 0.7 eV grown by ... -
Thin-film InAs/GaAs quantum dot solar cell with planar and pyramidal back reflectors
Aho, Timo; Elsehrawy, Farid; Tukiainen, Antti; Ranta, Sanna; Raappana, Marianna; Isoaho, Riku; Aho, Arto; Hietalahti, Arttu; Cappelluti, Federica; Guina, Mircea (14.07.2020)
article<p>Quantum dot solar cells are promising for next-generation photovoltaics owing to their potential for improved device efficiency related to bandgap tailoring and quantum confinement of charge carriers. Yet implementing ... -
Use of nanostructured alumina thin films in multilayer anti-reflective coatings
Reuna, Jarno; Aho, Arto; Isoaho, Riku; Raappana, Marianna; Aho, Timo; Anttola, Elina; Hietalahti, Arttu; Tukiainen, Antti; Guina, Mircea (2021)
article<p>A new method for modification of planar multilayer structures to create nanostructured aluminum oxide anti-reflection coatings is reported. The method is non-toxic and low-cost, being based on treatment of the ...