https://trepo.tuni.fi:443/handle/10024/123412 Mon, 11 May 2026 16:22:18 GMT 2026-05-11T16:22:18Z https://trepo.tuni.fi:443/handle/10024/236883 Gender Equality and LGBTQI Rights Ahrens, Petra; Gaweda, Barbara Wed, 01 Jan 2025 00:00:00 GMT https://trepo.tuni.fi:443/handle/10024/236883 2025-01-01T00:00:00Z https://trepo.tuni.fi:443/handle/10024/236882 Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth Puustinen, J.; Hilska, J.; Guina, M. The control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present a methodology for determining the variation in the Ga, As, and Bi fluxes and the temperature across a stationary substrate in molecular beam epitaxy. By correlating the flux distributions with material properties, we identify distinct regimes for epitaxy of GaAsBi. In particular, we devise a detailed image of the interplay between Bi incorporation and structural properties of a bulk GaAs 0.96 Bi 0.04 layer grown on GaAs(1 0 0) with respect to the As/Ga ratio. The influence of As/Ga is analyzed with high resolution over the important stoichiometric range (i.e. As/Ga = 0.6–1.6). Growth outside the near-stoichiometric As/Ga regime leads to decreased Bi incorporation, decreased structural quality and the formation of Ga, Ga/Bi or Bi droplets. On the other hand, growth at As/Ga = 1.00–1.17 leads to maximized material quality. For this regime, the surface roughness is further optimized by fine-tuning the As/Ga ratio to suppress surface mounding to a value of 0.5 nm. The results reveal the extreme sensitivity of GaAsBi growth to small variations in the As/Ga ratio, and demonstrate the applicability of stationary growth in studying these effects. Mon, 01 Apr 2019 00:00:00 GMT https://trepo.tuni.fi:443/handle/10024/236882 2019-04-01T00:00:00Z https://trepo.tuni.fi:443/handle/10024/236881 The Speculative Camera Caine, Ariel; Lehmuskallio, Asko; Toister, Yanai Thu, 01 May 2025 00:00:00 GMT https://trepo.tuni.fi:443/handle/10024/236881 2025-05-01T00:00:00Z https://trepo.tuni.fi:443/handle/10024/236815 Lurking minds: How silent listening shapes understanding in digital spaces Ala-Kortesmaa, Sanna This study investigates how silent listening, the act of consuming digital content without visible interaction, shapes individual understanding in algorithmically mediated environments. Drawing on a qualitative dataset of 21 semi-structured interviews, this study explores how users describe their listening practices, how these shape cognition and emotion, and how they understand the ethical implications of their listening habits. Data were analyzed using reflexive thematic analysis to surface recurring interpretive and affective patterns. Three key findings emerge: (1) silent listening is not passive but structured by platform dynamics that render listeners infrastructurally embedded; (2) understanding is shaped through ambient exposure and emotional attunement, leading to gradual, often unrecognized shifts in beliefs; and (3) ethical agency extends to attention, as silent engagement contributes to content visibility in ways users cannot fully control. Framed through cybernetic, sociocultural, and critical traditions of communication theory, the study reconceptualizes silent digital listening as an ethically and structurally meaningful form of participation. It invites reflection on how attention, rather than expression alone, configures digital publics, platform governance, and responsibility. Sun, 03 May 2026 00:00:00 GMT https://trepo.tuni.fi:443/handle/10024/236815 2026-05-03T00:00:00Z